产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 25 V, 0.008 ohm, 4.5 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 460 mA, -25 V, 1.1 ohm, -4.5 V, -860 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 200 V, 10 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 500mA SOT-23
(EN)
SEMIKRON
晶体管, MOSFET, N沟道, 200 A, 100 V, 0.007 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 200 V, 38 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 250 V, 33 mohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 72 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 48 A, 500 V, 100 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 106 A, 75 V, 0.0059 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 130A, D2-PAK
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 60V V(BR)DSS
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 230 A, 100 V, 6 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 90 A, 200 V, 22 mohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 40 V, 0.009 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -2.8 A, -20 V, 0.048 ohm, -4.5 V, -750 mV
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 80 A, 500 V, 55 mohm, 10 V, 4.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
INFINEON
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 100 V, 0.11 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.7 A, -20 V, 40 mohm, -4.5 V, 700 mV
(EN)
INFINEON
MOSFET, N-CH, 75V, 85A, TO-263AB-3
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 42 A, 250 V, 84 mohm, 10 V, 5.5 V
(EN)
