产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 250 mohm, 10 V, 3.75 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, -185mA, SOT-23, 整卷
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 60V, 300MA, 3-SOT-23, 整卷
(EN)
INFINEON
N CH POWER MOSFET, HEXFET, 30V, 27A, PQF
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.058 ohm, -4.5 V, -750 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, N通道, MOSFET, 25V, 34A, 8-PWR56
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -1.1 A, -60 V, 400 mohm, -10 V, -3 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, POWERPAK SO-8
(EN)
VISHAY
N CHANNEL MOSFET, 20V, 60A, SOIC
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 1.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -12 V, 0.023 ohm, -4.5 V, 400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.00125 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 74 A, 25 V, 0.0028 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 330 mA, 60 V, 1.25 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.11 ohm, 10 V, 600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 0.15 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 28.5 mohm, -4.5 V, -400 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 60V, 195A, TO-262-3
(EN)
