产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
VISHAY
晶体管, MOSFET, P沟道, 19 A, -100 V, 200 mohm, -10 V, -4 V
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 30V, 5A, 0.024OHM, SON-6
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 5.5 A, 20 V, 0.029 ohm, 4.5 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0033 ohm, 20 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 270 mA, 100 V, 6 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 57 A, 100 V, 0.0064 ohm, 10 V, 3.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 129 A, 135 V, 0.0067 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 60 A, 60 V, 0.0073 ohm, 10 V, 3.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 100 V, 0.21 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 35 V, 0.028 ohm, 10 V, 2.6 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.295 ohm, -10 V, -4 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -16A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.042 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.028 ohm, -10 V, -600 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -10 A, -60 V, 0.13 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 250 V, 0.042 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 60 V, 17500 μohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.038 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.8 A, -30 V, 0.065 ohm, -10 V, -2.1 V
(EN)
