产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 28 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.004 ohm, 4.5 V, 600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 沟, N沟道, 6.1 A, 30 V, 0.026 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 30 V, 0.0058 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.064 ohm, -4.5 V, -1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 13 mohm, -10 V, -1.4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.00048 ohm, 10 V, 2.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 192 A, 100 V, 0.0035 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -860 mA, -20 V, 120 mohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -12 V, 50 mohm, -4.5 V, -550 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 106 A, 40 V, 0.0037 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 30 V, 0.1 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, P通道, -20V, -350MA, SOT-416-3
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.8 A, 20 V, 0.04 ohm, 4.5 V, 950 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 14 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0016 ohm, -10 V, -1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -150 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
