产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0018 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.8W, 8-1212
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.2 A, -12 V, 0.059 ohm, -4.5 V, -680 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 3.1 mohm, 10 V, 1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 4.5A, SSOT-6
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 18A, TO-220AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 185mA, TO-236
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.07 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 150 V, 68 mohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.06 ohm, -4.5 V, -600 mV
(EN)
VISHAY
N CHANNEL, MOSFET, 30V, 30A, PowerPAK SO
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 11A, IPAKS
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 3.2A SOT-23
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 31A, D-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9 A, 500 V, 0.59 ohm, 13 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 41 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 10 mohm, -10 V, -2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.4 A, 30 V, 0.045 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 80 V, 0.0037 ohm, 10 V, 2.8 V
INFINEON
晶体管, MOSFET, N沟道, 87 A, 150 V, 0.0079 ohm, 10 V, 3.8 V
(EN)
