产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 100 mohm, 4.5 V, 700 mV
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 A, 100 V, 10 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 42 A, 100 V, 14 mohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 5 mohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.2 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0063 ohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 0.016 ohm, -10 V, -2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 17 A, 60 V, 70 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0034 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 9.9 A, -40 V, 60 mohm, -10 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 0.064 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 40 V, 0.006 ohm, 10 V, 3.9 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -35 V, 9.7 mohm, -10 V, -1.6 V
(EN)
NEXPERIA
P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 60 V, 0.00165 ohm, 10 V, 3.7 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 46 A, 40 V, 11 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 86 A, 60 V, 0.006 ohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -130 mA, -50 V, 10 ohm, -5 V, -1.6 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 4.7A, SOIC
(EN)
VISHAY
晶体管, N沟道, 12A, 20V, 3.5W
(EN)
