产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0027 ohm, 10 V, 2.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -3 A, -60 V, 0.13 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.0103 ohm, 20 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 46 A, 20 V, 0.00155 ohm, 10 V, 1 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.142 ohm, -4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.2 A, -150 V, 0.24 ohm, -10 V, -5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 100 V, 48 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 1.4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 19 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0096OHM, 16.5A, MLP-8
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -4.8 A, -20 V, 21 mohm, -4.5 V, -1.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5 A, 150 V, 0.041 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 6.6 A, -100 V, 480 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 760 mA, -20 V, 0.26 ohm, -4.5 V, -450 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 55 V, 27 mohm, 10 V, 4 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.158 ohm, -10 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.032 ohm, -4.5 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.016 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 20 V, 0.0041 ohm, 10 V, 600 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 20A, D-PAK
(EN)
