产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -42 A, -55 V, 0.02 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -8.8 A, -20 V, 0.012 ohm, -4.5 V, -880 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0294 ohm, 10 V, 3.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.8 A, -500 V, 3 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.0286 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2.6 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.1 A, -30 V, 19.5 mohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.011 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 100 V, 0.0083 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 21.5 A, 12 V, 0.0042 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 12 V, 3.1 mohm, 4.5 V, 400 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -60 V, 0.077 ohm, -10 V, -2.6 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.4 mohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -25 A, -60 V, 0.033 ohm, -10 V, -2.6 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 150V, 33A, DPAK
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 25V, 750mA, SOT-323
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 53 A, 60 V, 0.0108 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.1 A, 150 V, 0.057 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 107 mohm, 5 V, 3 V
(EN)
