产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.262 ohm, -10 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 9.2 A, 100 V, 270 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 54 A, 30 V, 11.6 mohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 2.6A, SOT-223
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 41 A, 30 V, 0.0065 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.3 A, 100 V, 0.068 ohm, 10 V, 1.6 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 5 V, 2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 100 V, 160 mohm, 5 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -4.5A, 8-SOIC
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.025 ohm, -10 V, -1.4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 200V, 50A, TO-247AC
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.0291 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 10 mohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 55 A, 60 V, 16.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0037 ohm, 4.5 V, 1.63 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1.2 A, 250 V, 1.8 ohm, 10 V, 3.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0085 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 13.1 A, 100 V, 0.049 ohm, 10 V, 3.2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.6 A, 100 V, 0.078 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 3 mohm, 10 V, 1.2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, SOIC-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 89 A, 40 V, 0.0041 ohm, 10 V, 1.8 V
(EN)
