产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 39 A, 200 V, 66 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 100 mA, 450 V, 60 ohm, 0 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.0236 ohm, 4.5 V, 810 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00065 ohm, 10 V, 1.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 65 A, 30 V, 4.92 mohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0103 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -40 V, 6.7 mohm, -10 V, -1 V
(EN)
MICROCHIP
MOSFET, N CHANNEL, 300V, 0.2A, TO-243AA-3
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 14 A, 25 V, 0.0704 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.036 ohm, -4.5 V, -800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 100 V, 7.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0039 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.4 A, 250 V, 0.9 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.002 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 161 A, 30 V, 3.3 mohm, 10 V, 2.3 V
(EN)
INFINEON
MOSFET, N CHANNEL, 40V, 56A, TO-252AA-3
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 17 A, -60 V, 120 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.012 ohm, 10 V, 3 V
(EN)
