产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
DIODES INC.
晶体管, MOSFET, P沟道, -950 mA, -20 V, 150 mohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 10.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 500 V, 0.22 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, 4.5 V, 900 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 2.8 mohm, 10 V, 1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 100 V, 28 mohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 11A TO-251AA
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
VISHAY
场效应管, MOSFET, N沟道, 500V, 10.5A, TO-220FP-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0024OHM, 42A, POWER 56-8
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.008 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -6.9 A, -20 V, 0.026 ohm, -4.5 V, -400 mV
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -100V, 14A, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 80 V, 0.0011 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.089 ohm, 5 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 40 V, 0.01 ohm, 4.5 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 13 A, -100 V, 205 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7 A, 200 V, 0.194 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, P沟道, 40 A, -100 V, 60 mohm, -10 V, -4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 61 A, 30 V, 0.0082 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 900 mA, -20 V, 600 mohm, 4.5 V, -700 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0029 ohm, 10 V, 1.3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 42 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
