产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
DIODES INC.
晶体管, MOSFET, P沟道, -3.7 A, -60 V, 0.055 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.0034 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 36W, TO-252
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -4.3 A, -35 V, 0.045 ohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 40 V, 4 mohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0037 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 180 A, 100 V, 4.5 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 100 V, 26 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 5 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0034 ohm, 8 V, 1.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 0.088 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 125W, TO-262
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 2.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.29 mohm, 10 V, 1.7 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 6.7A
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 61 A, 60 V, 0.0102 ohm, 10 V, 2.3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -30 V, 0.0122 ohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 3.3 A, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 2.5A, SOT-23
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 100 V, 52 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.0229 ohm, 10 V, 4 V
(EN)
