产品分类：场效应管MOSFET晶体管(600V以下),规格：汽车质量标准 -,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 28 A, 300 V, 108 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 8.5 mohm, 10 V, 4 V
(EN)
INFINEON
场效应管, P通道, MOSFET, -55V, 19A, TO-262
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 23A, TO-220FP
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 15 A, 60 V, 0.0139 ohm, 10 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 40 V, 5400 μohm, 10 V, 1.2 V
(EN)
VISHAY
MOSFET, P CHANNEL, -100V, -13.2A, POWERPAK 1212-8
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 90 mA, -60 V, 14 ohm, -10 V, -3.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3 A, -150 V, 0.073 ohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 7.7A, IPAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0051 ohm, 10 V, 1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 12.9 A, 60 V, 0.034 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 100 V, 0.0072 ohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0039 ohm, 10 V, 2.7 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -8 V, 0.0162 ohm, -4.5 V, -800 mV
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 100 mA, 60 V, 6 ohm, 4 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 100 V, 0.0079 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 25 mohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 30 V, 0.002 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -110 A, -60 V, 0.0055 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 30 V, 9.5 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 26 A, 30 V, 0.0013 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 4.2 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 100 A, 500 V, 0.043 ohm, 10 V, 5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 40V, 19A, SOIC-8TRA
(EN)
