产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 1V,
VISHAY
场效应管, MOSFET, N沟道, 30V, 19.3A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 6.5 mohm, 10 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 230 mA, 20 V, 1.8 ohm, 4.5 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 80V, 39A, DPAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 22 A, 30 V, 45 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 190 mA, 60 V, 2 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 154 mA, 30 V, 1.4 ohm, 4.5 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 2.7A, SOT-223-4
(EN)
INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 64A TO-220AB
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0011 ohm, 10 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, POWERPAK SO-8
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 7 A, 40 V, 50 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19.3 A, 30 V, 0.007 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 13 mohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 10A, 30V, 2.5W
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 2.8 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13.6 A, 30 V, 9.1 mohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 380 mA, 60 V, 1.19 ohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 30 V, 0.0028 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15.7 A, 60 V, 0.042 ohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.13 ohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
