产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 4V,
INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 2 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 200 V, 40 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 5.8 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 20 V, 4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.0048 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 150 V, 0.058 ohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 14 A, 60 V, 0.1 ohm, 10 V, 4 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 70 A, 60 V, 5.8 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 3A, SOIC
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 18A, D2-PAK
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 0.04 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 57 A, 200 V, 0.027 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 0.008 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 63 A, 60 V, 0.0102 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 400 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 170 A, 75 V, 4.1 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 40 A, 300 V, 85 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)
