产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 2.6V,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 150 V, 425 mohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.5 A, -60 V, 300 mohm, -10 V, 2.6 V
(EN)
VISHAY
场效应管, MOSFET, N通道, 30V, 24.5A, SOIC, 整卷
(EN)VISHAY
场效应管, MOSFET, N通道, 30V, 40A, SOIC, 整卷
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0023 ohm, 20 V, 2.6 V
(EN)
VISHAY
场效应管, MOSFET, N通道, 20V, 50A, SOIC, 整卷
(EN)
VISHAY
场效应管, MOSFET, N通道, 25V, 50A, SOIC, 整卷
(EN)
