产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 2V,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 370 A, 40 V, 0.00052 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 370 A, 40 V, 0.00052 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 287 A, 60 V, 0.00093 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 287 A, 60 V, 0.00093 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 55 A, 100 V, 26 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 55 V, 0.04 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0043 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 195 A, 24 V, 0.0012 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 100V, 38A, TO-3
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -50V, 130mA, SOT-23
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 0.068Ω, 2.7A
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 2Ω, 300mA, TO-236
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.00165 ohm, 10 V, 2 V
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 30A, TO-204AE
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 385 mA, 60 V, 780 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 475 mA, 60 V, 0.78 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 475 mA, 60 V, 0.78 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 115 mA, 60 V, 13.5 ohm, 10 V, 2 V
(EN)
