产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 600mV,
VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.055 ohm, 4.5 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.028 ohm, 4.5 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 25 V, 7.1 mohm, 10 V, 600 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V 13.5A 8-SOIC
(EN)
VISHAY
场效应管, MOSFET, N沟道, 12V, 9.5A
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 11.3A, POWERPAK 1212-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.3 A, 30 V, 0.087 ohm, 10 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.013 ohm, 4.5 V, 600 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 8 A, 20 V, 0.0235 ohm, 4.5 V, 600 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 40 A, 20 V, 8.5 mohm, 4.5 V, 600 mV
(EN)
