产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 850mV,
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 20 V, 35 mohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 220 mA, 25 V, 3.1 ohm, 4.5 V, 850 mV
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 4.5 A, 20 V, 0.02 ohm, 4 V, 850 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.9 A, 20 V, 0.045 ohm, 8 V, 850 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.9 A, 20 V, 0.025 ohm, 4.5 V, 850 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV
(EN)
