产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 800mV,
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 800 mA, 100 V, 1.5 ohm, 10 V, 800 mV
(EN)
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 75 A, 30 V, 0.004 ohm, 10 V, 800 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 整卷
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)
INFINEON
场效应管, MOSFET, 整卷
(EN)
INFINEON
场效应管, N通道, MOSFET, 30V, 3.4A, 3-SOT-23, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
(EN)
INFINEON
场效应管, MOSFET, N沟道 通道, 20V, 211A, DIRECTFET
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 560 mA, 30 V, 1.5 ohm, 4 V, 800 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 22 A, 12 V, 0.0075 ohm, 4.5 V, 800 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 680 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 560mA SOT-23, 整卷
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 250 mohm, 4 V, 800 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 VDC, 0.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 680 mA, 25 V, 0.33 ohm, 4.5 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 38 A, 20 V, 0.0005 ohm, 10 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 26 A, 20 V, 2 mohm, 4.5 V, 800 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 26 A, 20 V, 2 mohm, 4.5 V, 800 mV
(EN)
