产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs -,
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -4 A, -16 V, 0.06 ohm, -4.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 mA, 12 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 2.9 mohm, 10 V
(EN)
CLARE
晶体管, MOSFET, N沟道, 130 mA, 350 V, 8 ohm, -350 mV
(EN)
CLARE
场效应管, MOSFET, N沟道, 耗尽型, 350V, 8Ω, 5MA, SOT-223-4, 整卷
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 350 mA, 500 V, 7 ohm, 0 V
(EN)
MICROCHIP
场效应管, MOSFET, N沟道, 500V, 0.35A, TO-252AA-3
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 200 mA, 300 V, 12 ohm, 0 V
(EN)MICROCHIP
场效应管, MOSFET, N沟道, 350V, 0.135A, TO-243AA-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道
(EN)
RENESAS
晶体管, MOSFET, N沟道, 45 A, 40 V, 0.0028 ohm, 10 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 40 A, 40 V, 3.9 mohm, 10 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 35 A, 60 V, 0.0055 ohm, 10 V
(EN)RENESAS
晶体管, MOSFET, N沟道, 40 A, 60 V, 4.5 mohm, 10 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.009 ohm, 10 V
(EN)RENESAS
晶体管, MOSFET, N沟道, 30 A, 80 V, 8.2 mohm, 10 V
(EN)RENESAS
晶体管, MOSFET, N沟道, 35 A, 80 V, 6.9 mohm, 10 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.015 ohm, 10 V
(EN)RENESAS
晶体管, MOSFET, N沟道, 20 A, 100 V, 17 mohm, 10 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.4 A, -20 V, 0.053 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -2.7 A, -20 V, 0.083 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.219 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -2.2 A, -30 V, 0.138 ohm, -10 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -2.6 A, -30 V, 0.195 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.11 ohm, -4.5 V
(EN)
