产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 1.8V,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 66A, TO-252
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 8 mohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 25 V, 0.0042 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 100A, 0.0025Ω, SON-8
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 30 V, 0.004 ohm, 10 V, 1.8 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 30V, 18A, SOIC
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 16A, PQFN
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 349 A, 60 V, 0.0013 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 11.3 mohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 30 V, 7 mohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3 A, 20 V, 0.045 ohm, 4.5 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 0.0033Ω, 100A, TO-220-3
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 11mA
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.8 A, 40 V, 0.009 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 112 A, 40 V, 0.0022 ohm, 10 V, 1.8 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 25A, PQFN-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 79 A, 30 V, 0.0038 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 82 A, 30 V, 0.0041 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 30 V, 0.0072 ohm, 10 V, 1.8 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 25V, 100A, PQFN-8
(EN)INFINEON
场效应管, MOSFET, N沟道, 25V, 30A, PQFN-8
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 30 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 124 A, 40 V, 0.0028 ohm, 10 V, 1.8 V
(EN)
