产品分类：场效应管MOSFET晶体管(600V以下),规格：阈值电压 Vgs 1.8V,
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 40V, 100A, 0.0018Ω, SON-8
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 11A, SOIC
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00153 ohm, 10 V, 1.8 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 19 A, 20 V, 0.0022 ohm, 4.5 V, 1.8 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.8A, 6-PQFN
(EN)
INFINEON
场效应管, MOSFET, N沟道, HEXFET, 30V, 8.2A, TSOP-6
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.9 A, 20 V, 31 mohm, 4.5 V, 1.8 V
(EN)
INFINEON
N CH POWER MOSFET, HEXFET, 30V, 27A, PQF
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.026Ω, 2.7A, SUPERSOT-3
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0025 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.8 A, 30 V, 0.013 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.37 A, 42 V, 0.165 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 2 A, 42 V, 0.165 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 8 mohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 170 mA, 100 V, 3.4 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 81 A, 25 V, 0.0041 ohm, 4.5 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.001 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0101 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N通道, 30V, 56A
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0065 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 30 V, 120 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 40 V, 0.0197 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 100 V, 0.0189 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13.6 A, 60 V, 0.0056 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.0067 ohm, 10 V, 1.8 V
(EN)
