
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.7 mohm, 10 V, 3 V

INFINEON
晶体管, MOSFET, N沟道, 170 mA, 100 V, 2.9 ohm, 10 V, -2.2 V

ON SEMICONDUCTOR
场效应管, MOSFET

INFINEON
晶体管, MOSFET, N沟道, 30 A, 100 V, 0.0258 ohm, 10 V, 1.7 V

NEXPERIA
晶体管, MOSFET, N沟道, 34 A, 55 V, 32 mohm, 10 V, 1.5 V

INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.035 ohm, 4.5 V, 1.2 V

VISHAY
晶体管, MOSFET, N沟道, 200 mA, 20 V, 5 ohm, 4.5 V, 700 mV

INFINEON
晶体管, MOSFET, P沟道, -19 A, -100 V, 117 mohm, -10 V, -4 V

ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 200 mA, 50 V, 3.5 ohm, 5 V, 1.5 V

VISHAY
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, P沟道, 6 A, -100 V, 600 mohm, -10 V, -4 V

INFINEON
晶体管, MOSFET, P沟道, 17 A, -55 V, 100 mohm, -10 V, -4 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -100 V, 820 mohm, -10 V, -4 V

DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V

NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 250 V, 2.8 ohm, 10 V, 2 V

NEXPERIA
晶体管, MOSFET, P沟道, -2.4 A, -30 V, 0.1 ohm, -10 V, -1.5 V

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 60 V, 47 mohm, 5 V, 3 V

VISHAY
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.063 ohm, -10 V, -3 V

STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.015 ohm, 10 V, 3 V

VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 400 mV

ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 9.4 A, -60 V, 185 mohm, -10 V, -4 V

VISHAY
场效应管, MOSFET, N沟道, 20V, 2.9A, TO-236

INFINEON
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.098 ohm, -10 V, -2.5 V

DIODES INC.
晶体管, MOSFET, P沟道, -90 mA, -45 V, 9 ohm, -10 V, -3.5 V

INFINEON
晶体管, MOSFET, N沟道, 9.1 A, 100 V, 210 mohm, 10 V, 4 V