产品分类：场效应管MOSFET晶体管(600V以下),规格：针脚数 3引脚,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.1 A, 12 V, 0.14 ohm, 4.5 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.1 A, 12 V, 0.14 ohm, 4.5 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.9 A, 12 V, 0.037 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.3 A, -12 V, 0.15 ohm, -4.5 V, -950 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.5 A, -20 V, 0.075 ohm, -8 V, -950 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -1.6 A, -20 V, 0.175 ohm, -8 V, -950 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -4.6 A, -30 V, 0.07 ohm, -10 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4 A, -20 V, 31 mohm, -4.5 V, -550 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.1 A, 30 V, 240 mohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 540 mA, 20 V, 550 mohm, 4.5 V, 1.6 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.9 A, 20 V, 0.024 ohm, 4.5 V, 450 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 30 V, 0.1 ohm, 4.5 V, 500 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 30 V, 24 mohm, 10 V, 1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 300 mA, 50 V, 2 ohm, 5 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 1.6 V
(EN)
