产品分类：场效应管MOSFET晶体管(600V以下),规格：针脚数 3引脚,
TEXAS INSTRUMENTS
晶体管, MOSFET, FemtoFET™, P沟道, -1.7 A, -20 V, 0.11 ohm, -8 V, -950 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 0.54 ohm, 5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.185 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -61 A, -60 V, 0.016 ohm, -4.5 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 600 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 8.5 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.06 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -42 A, -55 V, 0.02 ohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.8 A, -500 V, 3 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 29 A, 55 V, 0.0286 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.5 A, 500 V, 3 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.4 mohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -25 A, -60 V, 0.033 ohm, -10 V, -2.6 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, HEXFET, 150V, 33A, DPAK
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 25V, 750mA, SOT-323
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 107 mohm, 5 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 12 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.6 A, -12 V, 40 mohm, -4.5 V, -600 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, -50A, TO-252-3
(EN)
