产品分类：场效应管MOSFET晶体管(600V以下),规格：针脚数 8引脚,
DIODES INC.
晶体管, MOSFET, P沟道, -7.3 A, -30 V, 0.013 ohm, -20 V, -1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7 A, 100 V, 0.019 ohm, 10 V, 3.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 30 V, 0.0059 ohm, 8 V, 1.3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, P沟道, -30V, 8.8A, SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.262 ohm, -10 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, -4.5A, 8-SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 10 mohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0085 ohm, 10 V, 2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, SOIC-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 89 A, 40 V, 0.0041 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
MOSFET, N CHANNEL, 60V, 50A, 0.0078OHM, SON-8
(EN)
TOSHIBA
晶体管, MOSFET, 功率, P沟道, -16 A, -30 V, 0.0039 ohm, -10 V, -800 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.037 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 250 V, 0.097 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00484 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.9 mohm, 10 V, 2.8 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -36 A, -30 V, 0.0027 ohm, -10 V, -2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 40 V, 0.002 ohm, 10 V, 1.9 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -35 A, -30 V, 0.0103 ohm, -10 V, -2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -19.2 A, -30 V, 0.0127 ohm, -4.5 V, -2.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0039 ohm, 10 V, 1.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
(EN)VISHAY
场效应管, P沟道, MOSFET, -100V, 28A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0011 ohm, 10 V, 1 V
(EN)
