产品分类：场效应管MOSFET晶体管(600V以下),规格：针脚数 8引脚,
INFINEON
晶体管, MOSFET, P沟道, -11 A, -30 V, 0.01 ohm, -20 V, -1.8 V
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)
VISHAY
晶体管, MOSFET, P沟道, -7.4 A, -30 V, 0.014 ohm, -10 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 13A, SOIC
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0014 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17.2 A, 30 V, 5.6 mohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.4 A, 100 V, 39 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.4 A, 30 V, 35 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 27 A, 30 V, 0.0067 ohm, 10 V, 2.5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 4.4 mohm, 4.5 V, 1.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9.6 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)TEXAS INSTRUMENTS
N CHANNEL MOSFET, 25V, 60A, SON
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0078 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 100 V, 22 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 5.4 A, 20 V, 40 mohm, 4.5 V, 700 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 6.7 A, 30 V, 0.011 ohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -30 V, 48 mohm, -10 V, -1.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -6.7 A, -20 V, 0.04 ohm, -4.5 V, -700 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 40 V, 0.0074 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 60 mohm, 10 V, 5.5 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 12.5A, SOIC
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 25V, 56A, SON
(EN)VISHAY
晶体管, MOSFET, N沟道, 35 A, 30 V, 6 mohm, 10 V, 1.15 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 0.027 ohm, 10 V, 1.5 V
(EN)
