产品分类：场效应管MOSFET晶体管(600V以下),规格：针脚数 8引脚,
VISHAY
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.00425 ohm, 10 V, 1.1 V
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -60A, POWERPAK SO-8
(EN)
VISHAY
场效应管, MOSFET, P沟道, -4.1A, -30V, 1.3W
(EN)
INFINEON
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.0065 ohm, -10 V, -2.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -13 A, -30 V, 0.03 ohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -20 V, 14 mohm, -4.5 V, -830 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 7.5A, 1206
(EN)
INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -30V, 4.6A, SOIC
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 61A, 1206
(EN)
VISHAY
场效应管, MOSFET, N沟道, 100V, 18A, POWERPAK 1212-8
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.9 A, -150 V, 0.245 ohm, -10 V, -2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.2A, 200V, PowerPAK SO
(EN)VISHAY
晶体管, MOSFET, P沟道, -14 A, -20 V, 0.006 ohm, -4.5 V, -400 mV
(EN)
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, 30V, 47A, SON-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -28 A, -30 V, 0.0052 ohm, -10 V, -1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0018 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 30V, 18A, SOIC
(EN)VISHAY
晶体管, MOSFET, N沟道, 34 A, 12 V, 2.1 mohm, 4.5 V, 400 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0023 ohm, 20 V, 2.6 V
(EN)ROHM
晶体管, MOSFET, P沟道, -6 A, -45 V, 0.026 ohm, -10 V, -2.5 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 150V, 3A, SOIC
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 16A, PQFN
(EN)
