产品分类：场效应管MOSFET晶体管(600V以下),规格：针脚数 8引脚,
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, 60 A, -20 V, 0.0088 ohm, -4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 30 V, 0.0006 ohm, 10 V, 1.9 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 25V, 40A, PQFN-8
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 29A, SOIC, 整卷
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0031 ohm, -10 V, -400 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, POWERPAK-SO, 整卷
(EN)VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC-8, 整卷
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET晶体管, 整卷
(EN)INFINEON
场效应管, MOSFET晶体管, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 4.5A, SOIC, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 9.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 0.03 ohm, 10 V, 1 V
(EN)INFINEON
场效应管, P通道, MOSFET, -30V, -16A, SOIC, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 5.6A, POWERPAK 1212, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 10.3A, SOIC-8, 整卷
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.015 ohm, 10 V, 1 V
(EN)INFINEON
N CH POWER MOSFET, HEXFET, 30V, 27A, PQF
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, N通道, MOSFET, 25V, 34A, 8-PWR56
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 40A, POWERPAK SO-8
(EN)VISHAY
N CHANNEL MOSFET, 20V, 60A, SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.00125 ohm, -10 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -16.1 A, -40 V, 0.018 ohm, -4.5 V, -1.2 V
(EN)
