产品分类：场效应管MOSFET晶体管(600V以下),规格：产品范围 -,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5A, SOT-223, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -60A, PowerPAKSO, 整卷
(EN)
VISHAY
场效应管, MOSFET
(EN)VISHAY
场效应管, MOSFET, P沟道, -60V, 0.051Ω, -3.2A, POWERPAK SO, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.122 ohm, -4.5 V, -900 mV
(EN)
INFINEON
场效应管, N通道, MOSFET, 30V, 3.4A, 3-SOT-23, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.014 ohm, -4.5 V, -700 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -4A
(EN)
VISHAY
场效应管, MOSFET, P沟道, 8-SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 140 A, 55 V, 0.008 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 0.065 ohm, -10 V, -2 V
(EN)
MICROCHIP
芯片, 场效应管, MOSFET, 耗尽模式, 350V, 35Ω, 3-SOT-23, T/R
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0039 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9.5 A, 30 V, 20 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0008 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 7.7 mohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -20A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, -3.5A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 27 A, -60 V, 0.055 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 36 A, 100 V, 26.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 150 V, 280 mohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -60V, -120mA, SOT-23, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 4A, SOT-223, 整卷
(EN)
