产品分类：场效应管MOSFET晶体管(600V以下),规格：产品范围 -,
VISHAY
MOSFET, P CHANNEL, -30V, -5.9A, SOT-23-3
(EN)
VISHAY
晶体管, MOSFET, P沟道, -5.9 A, -30 V, 0.037 ohm, -10 V, -1.2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, -8.6A, POWERPAK SO-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -12 V, 0.011 ohm, -4.5 V, -400 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -8 V, 0.028 ohm, -4.5 V, -350 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 40V, 50A, POWERPAK SO-8
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 4 A, -30 V, 70 mohm, 10 V, -800 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0126 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -35 A, -20 V, 0.0035 ohm, -10 V, -400 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 6A, 二极管, SOT23
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 3.2 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 500 V, 0.53 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -40V, -4.4A, SOT-23-3
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00085 ohm, 10 V, 1.41 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.0437 ohm, 10 V, 2.9 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -5.3 A, -30 V, 0.038 ohm, -10 V, -1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 170 mA, 100 V, 6 ohm, 10 V, 2.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -20 A, -20 V, 0.0199 ohm, -4.5 V, -850 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -430 mA, -250 V, 3 ohm, -10 V, -1.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 1.5A, TSOP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 75 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -3.6 A, -20 V, 0.048 ohm, -4.5 V, -650 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0022 ohm, 10 V, 1 V
(EN)
