产品分类：场效应管MOSFET晶体管(600V以下),规格：产品范围 -,
VISHAY
场效应管, MOSFET, N沟道
(EN)
TOSHIBA
晶体管, MOSFET, AEC-Q101, P沟道, -8 A, -60 V, 0.08 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, 60V V(BR)DSS
(EN)
VISHAY
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.41 ohm, 4.5 V, 900 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 8 V, 0.0078 ohm, 4.5 V, 350 mV
(EN)
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, NEXFET, 25V, 100A, SON-8
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 35.8 A, 30 V, 0.0011 ohm, 10 V, 3 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.00125 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16.8 A, 60 V, 0.05 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0045 ohm, 10 V, 2.8 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 1 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 163 A, 40 V, 0.0017 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0029 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 49 A, 60 V, 0.0074 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 38 A, 60 V, 0.0137 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 17 A, 60 V, 0.0228 ohm, 10 V, 2.1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.0116 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 0.2 ohm, 5 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 30 V, 9 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 37 A, 55 V, 0.027 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 42 A, 40 V, 0.0071 ohm, 10 V, 2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, 2.5 A, -60 V, 200 mohm, 10 V, 4 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 2.6A, SOT-23-3
(EN)
VISHAY
场效应管, MOSFET, P沟道, -80V, 28A, SOIC
(EN)
