产品分类：场效应管MOSFET晶体管(600V以下),规格：产品范围 -,
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6 A, 500 V, 1.05 ohm, 10 V, 3 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1 A, -20 V, 300 mohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 57 A, 30 V, 4.7 mohm, 11.5 V, 2.5 V
(EN)
NEXPERIA
晶体管, MOSFET, 带沟, N沟道, 400 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
INFINEON
晶体管, MOSFET, P沟道, -15 A, -30 V, 5.9 mohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 250 mohm, 10 V, 2.1 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -5.3 A, -20 V, 0.03 ohm, -4.5 V, -700 mV
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.11 ohm, -2.5 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 0.011Ω, -10.8A, SOIC-8
(EN)INFINEON
晶体管, MOSFET, P沟道, 6.2 A, -40 V, 41 mohm, -10 V, -3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 17A, TO-220AB
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
(EN)VISHAY
P CHANNEL MOSFET, -8V, 13.7A, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.2 A, 30 V, 65 mohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 24 A, -20 V, 0.041 ohm, -4.5 V, -700 mV
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 26 A, 100 V, 0.055 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0019 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 170 mA, 100 V, 2.98 ohm, 10 V, 1.405 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 33A, TO-220AB
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -11.8 A, -12 V, 0.015 ohm, -4.5 V, -680 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -2.7 A, -20 V, 100 mohm, -4.5 V, -890 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 5.6 A, 60 V, 0.068 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 60 V, 2730 μohm, 5 V, 1.7 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 340 mA, 60 V, 1.19 ohm, 10 V, 1 V
(EN)
