产品分类：场效应管MOSFET晶体管(600V以下),规格：产品范围 -,
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)
ROHM
晶体管, MOSFET, 低栅极驱动器, N沟道, 100 mA, 30 V, 13 ohm, 4 V, 1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, -3.1 A, -20 V, 0.062 ohm, -4.5 V, -1.01 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -74 A, -55 V, 20 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 3.8 A, -30 V, 98 mohm, 10 V, -2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 60 V, 14 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -60 A, -20 V, 0.0016 ohm, -10 V, -1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 800 mA, 60 V, 0.3 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -150 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.6 A, -30 V, 0.233 ohm, -10 V, -2.6 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 7.6 A, 60 V, 0.019 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 35 V, 0.08 ohm, 10 V, 2.6 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -8 A, -30 V, 0.027 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 100 mA, 50 V, 6 ohm, 4 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 40 V, 5 mohm, 4.5 V, 2.25 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.063 ohm, -4.5 V, -1.3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 5A, SOIC
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 35 V, 0.075 ohm, 10 V, 2.6 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 170 A, 60 V, 0.0033 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 40 V, 7.8 mohm, 10 V, 1.2 V
(EN)
