产品分类：场效应管MOSFET晶体管(600V以下),规格：电流, Id 连续 6A,
VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 6A, 二极管, SOT23
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 6 A, -30 V, 0.025 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6 A, 100 V, 300 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 30 V, 80 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -12 V, 26 mohm, -4.5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6 A, 500 V, 0.76 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6 A, -20 V, 0.04 ohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 150V, 6A, D-PAK
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 200 V, 0.46 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 20 V, 0.023 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.024 ohm, 10 V, 1.5 V
(EN)
RENESAS
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.028 ohm, 10 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 26500 μohm, 4.5 V, 450 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 60 V, 18 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 12V, 6A, 1206
(EN)VISHAY
场效应管, MOSFET, N通道, 30V, 6A, 1206, 整卷
(EN)VISHAY
场效应管, MOSFET, N通道, 20V, 6A, 1206, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 6A, POWERPAK
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 525 V, 0.72 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 6 A, 30 V, 24 mohm, 10 V, 2.5 V
(EN)
