产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 20V,
INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 18.6 A, -40 V, 0.0075 ohm, 20 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
(EN)
INFINEON
晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, 20 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 60V, 8A, SOIC
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 40V, 50A TO-263AB
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 80 A, 60 V, 0.0046 ohm, 20 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 75 V, 0.00734 ohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 60 V, 0.0126 ohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 200 V, 0.0186 ohm, 20 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 40 V, 8.5 mohm, 20 V, 1.9 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 8.7A, POWERPAK 1212
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 4.1A, TSOP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 290 A, 100 V, 2 mohm, 20 V, 4 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC-8
(EN)VISHAY
场效应管, MOSFET, N沟道, 80V, 30A, SOIC
(EN)
VISHAY
N CHANNEL MOSFET, 25V, 50A, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0048 ohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 350 A, 75 V, 0.00146 ohm, 20 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.7 mohm, 20 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 127 A, 100 V, 0.0056 ohm, 20 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 74 A, -55 V, 20 mohm, 20 V, 4 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 20A, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 270 A, 60 V, 2.1 mohm, 20 V, 3 V
(EN)
