产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 4.5V,
VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 900mA, SOT-23, 整卷
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, 3A, TO-236, 整卷
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)INFINEON
场效应管, N通道, MOSFET, 30V, 3.4A, 3-SOT-23, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 50A, POWERPAK8
(EN)
NEXPERIA
场效应管, MOSFET, N沟道 通道, 30V, 850MA, 3-SOT-23, 整卷
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.049 ohm, 4.5 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.026 ohm, 4.5 V, 400 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 10A, 30V, 2.5W
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 20V, 0.019OHM, 7A, MICROFET-6
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 5.1A, TSOP
VISHAY
晶体管, MOSFET, N沟道, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 75V, 16A POWERPAK
(EN)INFINEON
场效应管, MOSFET, N沟道, 2W, 6-TSOP
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 30 V, 2.8 mohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 7.8A, WDFN6
(EN)
INFINEON
晶体管, MOSFET, P沟道, 4 A, -20 V, 0.0471 ohm, 4.5 V, -1.2 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 7.3 A, 12 V, 0.015 ohm, 4.5 V, 600 mV
(EN)
VISHAY
Transistor Polarity:N Channel
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV
(EN)ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.066 ohm, 4.5 V, 1.5 V
(EN)
