产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 4.5V,
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 19 A, 20 V, 0.0022 ohm, 4.5 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 5 A, 20 V, 0.022 ohm, 4.5 V, 1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.075 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.031 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.075 ohm, 4.5 V, 1 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.025 ohm, 4.5 V, 1.3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 200 mA, 50 V, 1.6 ohm, 4.5 V, 800 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V, 6.1A
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0018 ohm, 4.5 V, 1.3 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0022 ohm, 4.5 V, 1.3 V
(EN)MICROCHIP
晶体管, MOSFET, N沟道, 48 A, 25 V, 0.01 ohm, 4.5 V, 1.35 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 7.8 A, 20 V, 0.023 ohm, 4.5 V, 600 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0013 ohm, 4.5 V, 1.5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 0.0039 ohm, 4.5 V, 1.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 5.9 A, 20 V, 31 mohm, 4.5 V, 1.8 V
(EN)
NEXPERIA
晶体管, N沟道, DMOS FET, 20V, 1.05A, 3-SOT-23, 整卷
(EN)
INFINEON
场效应管, N通道, MOSFET, 20V, 6.5A, MICRO-6, 整卷
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.27 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 1 A, 25 V, 0.249 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
晶体管, P沟道
(EN)ROHM
晶体管, MOSFET, N沟道, 2 A, 30 V, 194 mohm, 4.5 V, 1.5 V
(EN)
