产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 4.5V,
ROHM
晶体管, MOSFET, N沟道, 180 mA, 20 V, 1.4 ohm, 4.5 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.17 ohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 930 mA, 30 V, 0.38 ohm, 4.5 V, 1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 590 mA, 30 V, 0.55 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 1.8 A, 20 V, 0.12 ohm, 4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4 A, 20 V, 60 mohm, 4.5 V, 800 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 900 mA, 30 V, 0.39 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 255 mA, 20 V, 1.6 ohm, 4.5 V, 1.3 V
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 3.6A, SOT-23-3
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 890 mA, 20 V, 0.2 ohm, 4.5 V, 1.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 2.9A, MICRO FOOT-4
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 3.2A, SOT-23
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 5.7A, TRENCHFET-4
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.6 A, 12 V, 0.063 ohm, 4.5 V, 850 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 530 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.035 ohm, 4.5 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.093 ohm, 4.5 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 mA, 20 V, 5 ohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V, 400 mV
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 238 mA, 20 V, 1.5 ohm, 4.5 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.6 A, 20 V, 0.045 ohm, 4.5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 6.4 A, 12 V, 0.021 ohm, 4.5 V, 600 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 22 A, 20 V, 0.0094 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 361 mA, 20 V, 0.5 ohm, 4.5 V, 1 V
(EN)
