产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 4.5V,
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N和P沟道, 8 V, 0.04 ohm, 4.5 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 0.25 ohm, 4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 21 mohm, 4.5 V, 500 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
(EN)
VISHAY
N CHANNEL, MOSFET, 30V, 30A, PowerPAK SO
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.2 A, 20 V, 0.021 ohm, 4.5 V, 800 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 30 V, 1 ohm, 4.5 V, 900 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 210 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 5.4A, CHIPFET-8
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 140 mohm, 4.5 V, 1.75 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0042 ohm, 4.5 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道+肖特基, 3 A, 20 V, 0.08 ohm, 4.5 V, -600 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 4.7 A, 20 V, 0.024 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 0.00024Ω, 600mA, SC-89-3
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 4.5 A, 30 V, 0.03 ohm, 4.5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 100 mohm, 4.5 V, 700 mV
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 238mA, SC-75
(EN)
INFINEON
晶体管, MOSFET, N沟道, 28 A, 20 V, 0.0023 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 5.7 A, 20 V, 16.8 mohm, 4.5 V, 830 mV
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.2 A, 20 V, 120 mohm, 4.5 V, 700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V
(EN)
