产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 4.5V,
NEXPERIA
晶体管, MOSFET, N沟道, 6.8 A, 20 V, 0.016 ohm, 4.5 V, 650 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 20 V, 0.0032 ohm, 4.5 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.8 A, 20 V, 0.017 ohm, 4.5 V, 950 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 7.1 A, 12 V, 0.015 ohm, 4.5 V, 800 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 20V, 600mA, SOT-416-3
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 6.9 A, 20 V, 0.013 ohm, 4.5 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 8.7A, 6-PQFN
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 25 V, 2.3 mohm, 4.5 V, 700 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 915 mA, 20 V, 0.127 ohm, 4.5 V, 760 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 12 A, 20 V, 0.0125 ohm, 4.5 V, 400 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 21.5 A, 12 V, 0.0042 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 35 A, 12 V, 3.1 mohm, 4.5 V, 400 mV
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 25V, 750mA, SOT-323
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 230 mA, 20 V, 1.8 ohm, 4.5 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 30 mohm, 4.5 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 100 V, 0.044 ohm, 4.5 V, 2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 30V, 3.4A, 3-SOT-23
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 154 mA, 30 V, 1.4 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 91 A, 30 V, 0.0037 ohm, 4.5 V, 1.63 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1 A, 20 V, 0.3 ohm, 4.5 V, 500 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 33 mohm, 4.5 V, 950 mV
(EN)
