产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, N沟道, 28 A, 100 V, 77 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 24 V, 0.0012 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -200V, 11.5mA
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 135 V, 0.0047 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.00055 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.00163 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, 汽车, N沟道, 80 A, 75 V, 0.0048 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 44 A, 200 V, 54 mohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET?, N沟道, 50 A, 100 V, 0.0121 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 0.05 ohm, 10 V, 2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, P沟道, 1.6 A, -30 V, 210 mohm, 10 V, -1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00116 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.0017 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 6 A, 42 V, 0.09 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.6 A, 52 V, 0.095 ohm, 10 V, 1.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 100 A, 200 V, 0.0079 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 64 A, 200 V, 0.018 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 60 mA, 200 V, 25 ohm, 10 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 250 V, 0.085 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 100 A, 150 V, 0.0045 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 60 V, 3 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 63 A, 100 V, 0.011 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0021 ohm, 10 V, 3.1 V
(EN)
