产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
INFINEON
晶体管, MOSFET, N沟道, 70 A, 300 V, 0.0255 ohm, 10 V, 3 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 120 A, 250 V, 24 mohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 64 A, 500 V, 85 mohm, 10 V, 5.5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, HiPerFET, N沟道, 200 A, 70 V, 6 mohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 35 A, 150 V, 32 mohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 140 A, 300 V, 24 mohm, 10 V, 5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 88 A, 300 V, 40 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 140 A, 30 V, 5.5 mohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 169A, TO-220AB
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 340mA, SC-70, 整卷
(EN)
INFINEON
场效应管, MOSFET, N沟道, 400V, 14A, TO-204AA
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 96 A, 200 V, 24 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 43 A, 150 V, 42 mohm, 10 V, 4 V
(EN)NTE ELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 98 A, 500 V, 0.05 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 0.068Ω, 2.7A
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 3A, SOT-223
(EN)
INFINEON
场效应管, MOSFET, 整卷
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 300 mA, 20 V, 0.75 ohm, 10 V, 1.7 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2.8 ohm, 10 V, 2 V
(EN)
