产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.008 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.3 A, 60 V, 0.045 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 40 V, 2 mohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 100 A, 60 V, 0.0047 ohm, 10 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 140 mA, 450 V, 50 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 71 A, 60 V, 0.0051 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5.3 A, 500 V, 1.2 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 33 A, 80 V, 0.02 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0101 ohm, 10 V, 1.8 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 207 A, 30 V, 0.00095 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 334 A, 25 V, 0.00055 ohm, 10 V, 2.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 200 A, 40 V, 0.0009 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 60 V, 0.0054 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0033 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 55 V, 35 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 18 A, 30 V, 0.0025 ohm, 10 V, 1.6 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 49 A, 100 V, 0.0168 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 30 V, 0.0013 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 100 A, 25 V, 0.00089 ohm, 10 V, 1.75 V
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 0.023 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 78 V, 2.53 ohm, 10 V, 1.76 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 75 V, 13 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 60 V, 0.009 ohm, 10 V, 3 V
(EN)
