产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 10V,
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 58 A, 200 V, 40 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0035 ohm, 10 V, 1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 15 mohm, 10 V, 4 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 120 A, 150 V, 16 mohm, 10 V, 5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 3 A, 400 V, 1.47 ohm, 10 V, 3.75 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 17 A, 55 V, 0.07 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.0113 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 30 A, 75 V, 0.0159 ohm, 10 V, 1.6 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 40V, 60A, POWERPAKSO-8
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 4.5 A, 400 V, 490 mohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 60 V, 60 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 3.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 195 A, 40 V, 0.0014 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.9 A, 30 V, 20 mohm, 10 V, 1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 37 A, 200 V, 28 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2.2 ohm, 10 V, 5.5 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 94 A, 300 V, 0.036 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 47 A, 500 V, 78 mohm, 10 V, 5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 33 A, 250 V, 0.077 ohm, 10 V, 5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, 沟槽式FET, N沟道, 3 A, 150 V, 0.068 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 100 V, 0.0056 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0042 ohm, 10 V, 3.7 V
(EN)ROHM
晶体管, MOSFET, N沟道, 12 A, 250 V, 0.18 ohm, 10 V, 5 V
(EN)
