产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 -10V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.7 A, -200 V, 1.1 ohm, -10 V, -3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.8 A, -400 V, 7 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -30 A, -40 V, 0.019 ohm, -10 V, -2.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.057 ohm, -10 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -120 A, -60 V, 0.0056 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -60 V, 0.2 ohm, -10 V, -2.5 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 230 mA, -100 V, 8 ohm, -10 V, -3.5 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, 22 A, -55 V, 65 mohm, -10 V, -4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 200 mA, -240 V, 15 ohm, -10 V, -1.4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -28 A, -100 V, 0.033 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -100V, -33.5A
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -30 V, 0.026 ohm, -10 V, -2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.9 A, -60 V, 0.11 ohm, -10 V, -3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, P沟道, -8.8 A, -60 V, 0.23 ohm, -10 V, -3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -150V, -150A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, P沟道, -80 A, -30 V, 0.0056 ohm, -10 V, -1.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.6 A, -100 V, 0.6 ohm, -10 V, -4 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 75 mA, -100 V, 20 ohm, -10 V, -3.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 700 mA, -100 V, 1.2 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -13 A, -150 V, 0.29 ohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -70 A, -60 V, 0.01 ohm, -10 V, -2.6 V
(EN)
