产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 -10V,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5 A, -30 V, 65 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 12A, D-PAK
(EN)
VISHAY
晶体管, MOSFET, P沟道, -1.4 A, -150 V, 0.61 ohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -60 V, 0.082 ohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -1.3A, SuperSOT, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1.5 A, -30 V, 200 mohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -15 A, -60 V, 100 mohm, -10 V, -1.6 V
(EN)
VISHAY
场效应管, P通道, MOSFET, 整卷
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.2 A, -200 V, 145 mohm, -10 V, -4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 50A, TO-252
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -100V, 33.5mA, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 5A, SOT-223, 整卷
(EN)VISHAY
场效应管, MOSFET, P沟道, -30V, -4A
(EN)
INFINEON
晶体管, MOSFET, P沟道, -31 A, -55 V, 0.065 ohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 7.7 mohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -20A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 27 A, -60 V, 0.055 ohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -60V, -120mA, SOT-23, 整卷
(EN)VISHAY
场效应管, P通道, MOSFET, -30V, -8.1A, SOIC-8, 整卷
(EN)VISHAY
场效应管, MOSFET, P沟道
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -700mA, -150V, 8-SOIC
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9.9 A, -50 V, 0.2 ohm, -10 V, -4 V
(EN)
VISHAY
MOSFET, P CHANNEL, -200V, -1.9A, TO-252-3
(EN)
