产品分类：场效应管MOSFET晶体管(600V以下),规格：电压 @ Rds测量 8V,
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场效应管, MOSFET, P沟道, -20V, 14A, SOIC
(EN)
VISHAY
场效应管, MOSFET, P沟道, -8V, 4.1A, TO-236
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 97 A, 25 V, 3.9 mohm, 8 V, 1.1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0042 ohm, 8 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, NEXFET, 25V, 100A, SON-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 3.8 mohm, 8 V, 850 mV
(EN)TEXAS INSTRUMENTS
场效应管, N沟道, 大功率, 30V, 47A, SON-8
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.1 A, 30 V, 0.084 ohm, 8 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 1.5 A, 30 V, 0.185 ohm, 8 V, 850 mV
(EN)
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晶体管, MOSFET, N沟道, 2.9 A, 20 V, 0.045 ohm, 8 V, 850 mV
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 8A, TSOP, 整卷
(EN)
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场效应管, MOSFET, N通道, 12V, 50A, SOIC, 整卷
(EN)
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场效应管, MOSFET, N通道, 12V, 21.5A, SOIC, 整卷
(EN)
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场效应管, MOSFET, N沟道, 12V, 6A, 1206
(EN)
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场效应管, MOSFET, N通道, 20V, 12A POWERPAK, 整卷
(EN)VISHAY
场效应管, MOSFET, N通道, 12V, 22A, SOIC
(EN)VISHAY
场效应管, MOSFET, N通道, 12V, 40A, SOIC, 整卷
(EN)
