产品分类：场效应管MOSFET晶体管(600V以下),规格：MSL -,
NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 100 V, 8.16 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.003 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 37 A, 150 V, 42 mohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -75 A, -30 V, 5.5 mohm, -10 V, -1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 18 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 59 A, 300 V, 0.047 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18.1 A, 500 V, 0.25 ohm, 13 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 42A, TO-220AB
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0055 ohm, 10 V, 1.9 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 86 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 110 A, 55 V, 8 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 150 A, 30 V, 3.8 mohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 100 V, 29.3 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 270 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 16 A, 400 V, 300 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 150 V, 80 mohm, 10 V, 4.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19.4 A, 200 V, 0.12 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 23 A, 600 V, 0.132 ohm, 10 V, 3.5 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 75V, 130A, TO-220AB
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 500 mA, 500 V, 18 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 290 A, 100 V, 2 mohm, 20 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 70 A, 60 V, 14 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 71 A, 75 V, 13 mohm, 10 V, 4 V
(EN)
